Surface emitting 15 µm multi-quantum well LED on epitaxial lateral overgrowth InP/Si
نویسندگان
چکیده
منابع مشابه
Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN
Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with identical structures grown on conventional GaN. Atomic force microscopy is used to confirm the significant reduction of dislocations in the wing region of our LEO samples before active-region growth. Differences between surface morpholog...
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The model for anisotropic crystal growth on a substrate covered by a mask material with a periodic series of parallel long trenches where the substrate is exposed to the vapor phase is developed. The model assumes that surface diffusion and deposition flux are the main mechanisms of the growth, and that the three key surface quantities (energy, mobility and adatom diffusivity) are anisotropic w...
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An approach by which single crystal a-GaN can be grown laterally over oxidized AlAs (AlOx) formed on Si substrates is demonstrated. Regular a-Ga2-O3 stripe templates, spatially separated by AlOx , on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlOx is nominally planar, two pyramidal planes on separated GaN can merge by growing...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2020
ISSN: 2159-3930
DOI: 10.1364/ome.395249